--- 產(chǎn)品參數(shù) ---
- 溝道 P溝道
- 封裝 TO252封裝
--- 數(shù)據(jù)手冊(cè) ---
--- 產(chǎn)品詳情 ---
NT2955G (VBE2610N)參數(shù)說明:P溝道,-60V,-38A,導(dǎo)通電阻61mΩ@10V,72mΩ@4.5V,門源電壓范圍20V(±V),閾值電壓-1.3V,封裝:TO252。

應(yīng)用簡(jiǎn)介:NT2955G適用于功率開關(guān)和逆變器等高功率應(yīng)用的P溝道MOSFET。
其能夠處理較大的電流和電壓,適用于高功率需求的場(chǎng)景。
優(yōu)勢(shì)與適用領(lǐng)域:具有較大的電流和電壓承載能力,適用于高功率應(yīng)用,如電源開關(guān)、逆變器和電機(jī)驅(qū)動(dòng)等模塊。
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